IRLL014N hexfet ? power mosfet s d g v dss = 55v r ds(on) = 0.14 w i d = 2.0a fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the sot-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. its unique package design allows for easy automatic pick- and-place as with other sot or soic packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. power dissipation of 1.0w is possible in a typical surface mount application. 1/25/99 description l surface mount l advanced process technology l ultra low on-resistance l dynamic dv/dt rating l fast switching l fully avalanche rated sot-223 * when mounted on fr-4 board using minimum recommended footprint. ** when mounted on 1 inch square copper board, for comparison with other smd devices. parameter typ. max. units r q ja junction-to-amb. (pcb mount, steady state)* 90 120 r q ja junction-to-amb. (pcb mount, steady state)** 50 60 thermal resistance c/w parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v** 2.8 i d @ t a = 25c continuous drain current, v gs @ 10v* 2.0 i d @ t a = 70c continuous drain current, v gs @ 10v* 1.6 i dm pulsed drain current ? 16 p d @t a = 25c power dissipation (pcb mount)** 2.1 w p d @t a = 25c power dissipation (pcb mount)* 1.0 w linear derating factor (pcb mount)* 8.3 mw/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy ? 32 mj i ar avalanche current ? 2.0 a e ar repetitive avalanche energy ? * 0.1 mj dv/dt peak diode recovery dv/dt ? 7.2 v/ns t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings a pd- 91499b www.irf.com 1
IRLL014N 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.015 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.14 v gs = 10v, i d = 2.0a ? CCC CCC 0.20 w v gs = 5.0v, i d = 1.2a ? CCC CCC 0.28 v gs = 4.0v, i d = 1.0a ? v gs(th) gate threshold voltage 1.0 CCC 2.0 v v ds = v gs , i d = 250a g fs forward transconductance 2.3 CCC CCC s v ds = 25v, i d = 1.0a CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 16v gate-to-source reverse leakage CCC CCC -100 v gs = -16v q g total gate charge CCC 9.5 14 i d = 2.0a q gs gate-to-source charge CCC 1.1 1.7 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC 3.0 4.4 v gs = 10v, see fig. 6 and 9 ? t d(on) turn-on delay time CCC 5.1 CCC v dd = 28v t r rise time CCC 4.9 CCC ns i d = 2.0a t d(off) turn-off delay time CCC 14 CCC r g = 6.0 w t f fall time CCC 2.9 CCC r d = 14 w, see fig. 10 ? c iss input capacitance CCC 230 CCC v gs = 0v c oss output capacitance CCC 66 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 30 CCC ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) i gss r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 2.0a, di/dt 170a/s, v dd v (br)dss , t j 150c notes: ? v dd = 25v, starting t j = 25c, l = 4.0mh r g = 25 w , i as = 4.0a. (see figure 12) ? pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.0 v t j = 25c, i s = 2.0a, v gs = 0v ? t rr reverse recovery time CCC 41 61 ns t j = 25c, i f = 2.0a q rr reverse recoverycharge CCC 73 110 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics CCC CCC CCC CCC 16 1.3 a
IRLL014N www.irf.com 3 fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics, fig 2. typical output characteristics, 1 10 100 0.1 1 10 100 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs to p 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 100 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20s pulse w idth t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 4.0 5.0 6.0 7.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source c urrent (a) a v = 25v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-s ource o n resistance ds(on) (n orm alized) v = 10v gs a i = 2.0 a d
IRLL014N 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 100 200 300 400 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 3 6 9 12 15 q , total g ate char g e ( nc ) g v , g ate-to-source voltage (v) gs a for test circuit s ee figure 9 i = 2.0 a v = 44v v = 28v d ds ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 0.1 1 10 100 1 10 100 v , drain-to-source volta g e ( v ) ds i , drain current (a) ope ration in this area limite d by r d ds(on) t = 25c t = 150c sin g le p u ls e 10s 100s 1ms 10ms a a j
IRLL014N www.irf.com 5 q g q gs q gd v g charge + - v ds 10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit fig 9a. basic gate charge waveform fig 9b. gate charge test circuit fig 11. maximum effective transient thermal impedance, junction-to-ambient 10v 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , rectangular pulse duration (sec) 1 d = 0.50 0.01 0.02 0.05 0.10 0.20 s in g le p u ls e (thermal response) a thermal response (z ) thja p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. p eak t = p x z + t 1 2 j dm thja a
IRLL014N 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms t p v (br)dss i as 0 20 40 60 80 25 50 75 100 125 150 j e , single pulse avalanche energy (mj) as a startin g t , junction temperature ( c ) v = 25v i to p 1.8a 3.2a bottom 4.0a dd d fig 12a. unclamped inductive test circuit r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 10v
IRLL014N www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * fig 13. for n-channel hexfets
IRLL014N 8 www.irf.com package outline sot-223 (to-261aa) outline sot-223 part marking information date code (yw w ) y = last digit of the year ww = week bottom part number top international re ctifie r log o exa mple : this is an irfl014 w a fer lo t co de xxxxxx 314 fl014
IRLL014N www.irf.com 9 sot-223 outline tape & reel information 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ . 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) m in . 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel co ntains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) m ax . 14.40 (.566) 12.40 (.488) 4 4 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 1/99
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